Q. No.
A p-n photodiode is fabricated from a semiconductor with a band-gap of 2.5 eV. It can detect a signal of wavelength:
1. 6000 Å
2. 4000 nm
3. 6000 nm
4. 4000 Å
2. 4000 nm
3. 6000 nm
4. 4000 Å
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A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:
1.
2.
3.
4.
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In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table:
1. A B Y
0 0 0
0 1 0
1 0 0
1 1 1
2. A B Y
0 0 1
0 1 1
1 0 1
1 1 0
3. A B Y
0 0 1
0 1 0
1 0 0
1 1 1
4. A B Y
0 0 0
0 1 1
1 0 1
1 1 1
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In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
| 1. | \(\mathrm{p}\text-\)type semiconductor |
| 2. | insulator |
| 3. | metal |
| 4. | \(\mathrm{n}\text-\)type semiconductor |
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A transistor-oscillator using a resonant circuit with an inductance \(L\) (of negligible resistance) and a capacitance \(C\) has a frequency \(f\). If \(L\) is doubled and \(C\) is changed to \(4C\), the frequency will be:
1. \(\frac{f}{4}\)
2. \(8f\)
3. \(\frac{f}{2\sqrt{2}}\)
4. \(\frac{f}{2}\)
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A transistor is operated in common emitter configuration at constant collector voltage Vc = 1.5 V such that a change in the base current from 100 μA to 150 μA produces a change in the collector current from 5 mA to 10 mA. The current gain (β) is:
1. 67
2. 75
3. 100
4. 50
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The photoelectric effect is used by a photocell to convert:
| 1. | Change in the frequency of light into a change in electric voltage. |
| 2. | Change in the intensity of illumination into a change in photoelectric current. |
| 3. | Change in the intensity of illumination into a change in the work function of the photocathode. |
| 4. | Change in the frequency of light into a change in the electric current. |
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The following figure shows a logic gate circuit with two inputs A and B and the output C. The voltage waveforms of A, B, and C as shown below:
The logic circuit gate is :
1. AND gate
2. NAND gate
3. NOR gate
4. OR gate
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For a p-type semiconductor, which of the following statements is true?
1. Electrons are the majority carriers and pentavalent atoms are the dopants.
2. Electrons are the majority carriers and trivalent atoms are the dopants.
3. Holes are the majority carriers and trivalent atoms are the dopants.
4. Holes are the majority carriers and pentavalent atoms are the dopants.
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