The circuit diagram shown here corresponds to the logic gate:
1. NOR
2. AND
3. OR
4. NAND
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An LED is constructed from a p-n junction diode using GaAsP. The energy gap is 1.9 eV. The wavelength of the light emitted will be equal to:
1. 10.4
2. 654 nm
3. 654 m
4. 654
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The circuit shown below is equivalent to:
1. OR gate
2. NOR gate
3. AND gate
4. NAND gate
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The battery is shown in the figure, current drawn from the battery is:
1. 1 A
2. 2 A
3. 2.5 A
4. 4 A
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The input signal is given to a CE amplifier having a voltage gain of 150 is . The corresponding output signal will be:
1.
2.
3.
4.
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In the given figure, a diode D is connected to an external resistance R=100 and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:
1. 30 mA
2. 40 mA
3. 20 mA
4. 35 mA
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If in a p-n junction diode, a square input signal of 10 V is applied as shown
Then the output signal across will be
1.
2.
3.
4.
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A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be:
1. a p-type semiconductor
2. an n-type semiconductor
3. a p-n junction
4. an intrinsic semiconductor
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The reverse bias in a junction diode is changed from 8 V to 13 V, then the value of the current changes from . The resistance of the junction diode will be:
1.
2.
3.
4.
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