The LED:
1. is reverse-biased.
2. is forward-biased.
3. can be made of GaAs.
4. both (2) & (3) are correct.
The \((I-V)\) characteristics of a \(p-n\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(p-n\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
In an unbiased - junction diode
1. p-type side is at higher potential than n-type side
2. p-type side is at lower potential than n-type side
3. Electric field is directed from side to side
4. Both 2 & 3
A and B are the inputs for the given logic gate. The output Y will be:
1. | 2. | ||
3. | 4. |
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
(a) | type of semiconductor material |
(b) | amount of doping |
(c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
In the following figure, the diodes which are forward biased are:
(a) | |
(b) | |
(c) | |
(d) |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
Assertion (A): | The resistance of a photodiode decreases when light having photons of sufficient energy is incident on it. |
Reason (R): | When energetic photons fall on the \(\mathrm{p\text{-}n}\) junction of a photodiode, electron-hole pairs are created due to the breaking of the valence bonds. |
1. | (A) is True but (R) is False. |
2. | (A) is False but (R) is True. |
3. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
4. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
1. |
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2. |
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3. |
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4. |
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