In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
1. | p-type semiconductor |
2. | insulator |
3. | metal |
4. | n-type semiconductor |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be:
1. | 2.5 A | 2. | 10.0 A |
3. | 1.43 A | 4. | 3.13 A |
A forward-biased diode is treated as:
1. | an open switch with infinite resistance. |
2. | a closed switch with a voltage drop of 0 V. |
3. | a closed switch in series with a battery with voltage of 0.7 V. |
4. | a closed switch in series with small resistance and a battery. |
A half-wave rectifier voltage is fed to a load resistor. For which part of the cycle, the load current will flow?
1. | \(0^\circ-90^\circ\) | 2. | \(90^\circ-180^\circ\) |
3. | \(0^\circ-180^\circ\) | 4. | \(0^\circ-360^\circ\) |
If the input to the NOT gate is A, its output is:
1. 0
2. 1
3. A
4. \(\bar{A}\)
The combination of gates shown below is equivalent to:
1. AND gate
2. XOR gate
3. NOR gate
4. NAND gate
In the given circuit, PN-junction diodes are ideal. For the following potential of A and B, the correct increasing order of resistance between A and B will be:
i. –10V, –5V
ii. –5V, –10V
iii. –4V, –12V
1. (i) < (ii) < (iii)
2. (iii) < (ii) < (i)
3. (ii) = (iii) < (i)
4. (i) = (iii) < (ii)
The depletion layer in the P–N junction region is caused by:
1. | the drift of holes |
2. | diffusion of charge carriers |
3. | migration of impurity ions |
4. | drift of electrons |
The output in the circuit shown in the figure taken across a capacitor is:
1. | 2. | ||
3. | 4. |
Logic gates X and Y have the truth tables shown below:
When the output of X is connected to the input of Y, the resulting combination is equivalent to a single:
1. NOT gate
2. OR gate
3. NAND gate
4. AND gate