The following logic gate is:
1. AND
2. NAND
3. EX-OR
4. OR
One part of a device is connected to the negative terminal of a battery and the other part is connected to the positive terminal of a battery. If their ends are now altered, current does not flow in circuit. The device is:
1. P-N Junction
2. Transistor
3. Zener diode
4. Triode
Zener diode is used for:
1. rectification.
2. stabilisation.
3. amplification.
4. producing oscillations in an oscillator.
From the following diode circuit, which diode is in forward biased condition:
1. | 2. | ||
3. | 4. |
Given Truth table is correct for:
1. NAND
2. AND
3. NOR
4. OR
Identify the incorrect statement from the following:
1. | The resistivity of a semiconductor increases with an increase in temperature. |
2. | Substances with an energy gap of the order of 10 eV are insulators. |
3. | In conductors, the valence and conduction bands may overlap. |
4. | The conductivity of a semiconductor increases with an increase in temperature. |
Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by , and respectively. Which one of the following relationships is true in their case?
1.
2.
3.
4.
Application of a forward bias to a p-n junction:
1. | widens the depletion zone. |
2. | increases the number of donors on the n side. |
3. | increases the potential difference across the depletion zone. |
4. | increases the electric field in the depletion zone. |
The cause of potential barrier in a P-N junction diode is:
1. | Concentration of positive and negative ions near the junction. |
2. | Concentration of positive charges near the junction. |
3. | Depletion of negative charges near the junction. |
4. | Increment in concentration of holes and electrons near the junction. |
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1. | 2. | ||
3. | 4. |