List-I | List-II | ||
(a) | intrinsic semiconductor | (e) | prepared by adding phosphorus |
(b) | n-type semiconductor | (f) | the width is nearly one micron |
(c) | p-type semiconductor | (g) | silicon |
(d) | depletion layer | (h) | prepared by adding indium |
1. | a-g, b-e, c-h, d-f |
2. | a-h, b-f, c-e, d-g |
3. | a-e, b-g, c-f, d-h |
4. | a-f, b-h, c-g, d-e |
1. | increase its electrical resistivity |
2. | increase its electrical conductivity |
3. | increase its life |
4. | enable it to tolerate higher voltage |
A semiconductor is known to have an electron concentration of cm-3 and a hole concentration of cm-3. The semiconductor is:
1. n-type
2. p-type
3. intrinsic
4. insulator
1. | an anti-particle of electron. |
2. | a vacancy created when an electron leaves a covalent bond. |
3. | absence of free electrons. |
4. | an artificially created particle. |
If a small amount of aluminium is added to the silicon crystal:
1. | its resistance decreases. |
2. | it becomes a p-type semiconductor. |
3. | there will be fewer free electrons than holes in the semiconductor. |
4. | All of these are correct. |
1. | neutral |
2. | negative |
3. | positive |
4. | may be positive or negative |
Pure Si at 500 K has equal number of electron and hole concentration of Doping by indium increases to The doped semiconductor is of:
1. | n-type with electron concentration \(n_{e}=5\times10^{22}~m^{-3}\) |
2. | \(n_{e}=2.5\times10^{23}~m^{-3}\) | p-type with electron concentration
3. | \(n_{e}=2.5\times10^{10}~m^{-3}\) | n-type with electron concentration
4. | \(n_{e}=5\times10^{9}~m^{-3}\) | p-type with electron concentration