Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
1. | Statement I is incorrect and Statement II is correct. |
2. | Both Statement I and Statement II are correct. |
3. | Both Statement I and Statement II are incorrect. |
4. | Statement I is correct and Statement II is incorrect. |
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
(a) | type of semiconductor material |
(b) | amount of doping |
(c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
In the following figure, the diodes which are forward biased are:
(a) | |
(b) | |
(c) | |
(d) |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
In an unbiased - junction diode
1. p-type side is at higher potential than n-type side
2. p-type side is at lower potential than n-type side
3. Electric field is directed from side to side
4. Both 2 & 3
The \((I-V)\) characteristics of a \(p-n\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(p-n\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
1. | 2. | ||
3. | 4. |
1. | \(V_{A B}=i\cdot5+0.6\) |
2. | \(V_{A B}=i\cdot5-0.6\) |
3. | \(V_{A B}=i\cdot5+(0.6-5)\) |
4. | \(V_{A B}=i\cdot5+\left(0.6+5\right)\) |