A. | For a solar-cell, the \(I\text-V\) characteristics lies in the IV quadrant of the given graph. |
B. | In a reverse-biased pn junction diode, the current measured in (\(\mu \text{A}\)), is due to majority charge carriers. |
1. | A is incorrect but B is correct. |
2. | Both A and B are correct. |
3. | Both A and B are incorrect. |
4. | A is correct but B is incorrect. |
1. | forward biased zener diode. |
2. | type of light-emitting diode. |
3. | diode working on the principle of photo-voltaic effect. |
4. | type of photo-diode with external biasing. |
1. | light-emitting diode | 2. | zener-diode |
3. | photodiode | 4. | solar cell |
Statement I: | Photovoltaic devices can convert optical radiation into electricity. |
Statement II: | The Zener diode is designed to operate under reverse bias in the breakdown. |
1. | Statement I is incorrect but Statement II is correct. |
2. | Both Statement I and Statement II are correct. |
3. | Both Statement I and Statement II are incorrect. |
4. | Statement I is correct but Statement II is incorrect. |
1. | Zener voltage remains constant at the breakdown. |
2. | It is designed to operate under reverse bias. |
3. | The depletion region formed is very wide. |
4. | \(\mathrm{p}\) and \(\mathrm{n}\) regions of the Zener diode are heavily doped. |
Statement A: | A Zener diode is connected in reverse bias when used as a voltage regulator. |
Statement B: | The potential barrier of \(\mathrm{p\text-n}\) junction lies between \(0.2\) V to \(0.3\) V. |
1. | Statement A is correct and Statement B is incorrect. |
2. | Statement A is incorrect and Statement B is correct. |
3. | Statement A and Statement B both are correct. |
4. | Statement A and Statement B both are incorrect. |
An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)