Q. No.In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
| 1. | \(\mathrm{p}\text-\)type semiconductor |
| 2. | insulator |
| 3. | metal |
| 4. | \(\mathrm{n}\text-\)type semiconductor |
In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero
| 1. | The resistivity of a semiconductor increases with an increase in temperature. |
| 2. | Substances with an energy gap of the order of \(10\) eV are insulators. |
| 3. | In conductors, the valence and conduction bands may overlap. |
| 4. | The conductivity of a semiconductor increases with an increase in temperature. |
Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?
| 1. | \(\left(E_g\right)_C<\left(E_g\right)_{G e} \) | 2. | \(\left(E_g\right)_C>\left(E_g\right)_{S i} \) |
| 3. | \(\left(E_g\right)_C=\left(E_g\right)_{S i} \) | 4. | \(\left(E_g\right)_C<\left(E_g\right)_{S i}\) |
The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:
| 1. | Sample \(X\) is undoped while samples \(Y\) and \(Z\) have been doped with a third group and a fifth group impurity respectively. |
| 2. | Sample \(X\) is undoped while both samples \(Y\) and \(Z\) have been doped with a fifth group impurity. |
| 3. | Sample \(X\) has been doped with equal amounts of third and fifth group impurities while samples \(Y\) and \(Z\) are undoped. |
| 4. | Sample \(X\) is undoped while samples \(Y\) and \(Z\) have been doped with a fifth group and a third group impurity respectively. |
In semiconductors at room temperature:
| 1. | The valence band is completely filled and the conduction band is partially filled. |
| 2. | The valence band is completely filled. |
| 3. | The conduction band is completely empty. |
| 4. | The valence band is partially empty and the conduction band is partially filled. |
1. \(6000~\mathring{A}\)
2. \(4000\) nm
3. \(6000\) nm
4. \(4000~\mathring{A}\)
How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature?
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)
Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?
| 1. |  |
2. |  |
| 3. |  |
4. |  |
A semiconductor is known to have an electron concentration of \(8\times 10^{13}~\text{cm}^{-3}\) and a hole concentration of \(5\times 10^{2}~\text{cm}^{-3}\). The semiconductor is:
| 1. | \(\mathrm{n}\text-\)type | 2. | \(\mathrm{p}\text-\)type |
| 3. | intrinsic | 4. | insulator |
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