In a good conductor, the energy gap between the conduction band and the valence band is
1. Infinite
2. Wide
3. Narrow
4. Zero
A Ge specimen is doped with Al. The concentration of acceptor atoms is . Given that the intrinsic concentration of electron hole pairs is , the concentration of electrons in the specimen is:
1. | \(10^{17} / \mathrm{m}^3 \) | 2. | \(10^{15} / \mathrm{m}^3 \) |
3. | \(10^4 / \mathrm{m}^3 \) | 4. | \(10^2 / \mathrm{m}^3\) |
In a semiconducting material, the mobilities of electrons and holes are and respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)
The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all currents and a maximum power rating of 100 milliwatts. What should be the value of the resistor R, connected in series with the diode for obtaining maximum current?
1. 1.5
2. 5
3. 6.67
4. 200
For the transistor circuit shown below, if = 100, the voltage drop between emitter and base is 0.7 V, then the value of will be:
1. 10 V
2. 5 V
3. 13 V
4. 0 V
The figure shows two NAND gates followed by a NOR gate. Which of the following logic gate does the figure represent?
1. OR
2. AND
3. NAND
4. None of these
The diagram of a logic circuit is given below. The output F of the circuit is represented by:
1. W(X+Y)
2. W.(X.Y)
3. W+(X.Y)
4. W+(X+Y)
How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature?
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)
Which of the following logic gate is a universal gate?
1. OR
2. NOT
3. AND
4. NOR
Consider an NPN transistor amplifier in the common-emitter configuration. The current gain of the transistor is 100. If the collector current changes by 1 mA, what will be the change in emitter current?
1. 1.1 mA
2. 1.01 mA
3. 0.01 mA
4. 10 mA