If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38~\mu \text{A}\) to \(88~\mu \text{A}\). The resistance of junction diode will be:
1. \(4\times10^{5}\)
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)
The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:
1. | Sample \(X\) is undoped while samples \(Y\) and \(Z\) have been doped with a third group and a fifth group impurity respectively. |
2. | Sample \(X\) is undoped while both samples \(Y\) and \(Z\) have been doped with a fifth group impurity. |
3. | Sample \(X\) has been doped with equal amounts of third and fifth group impurities while samples \(Y\) and \(Z\) are undoped. |
4. | Sample \(X\) is undoped while samples \(Y\) and \(Z\) have been doped with a fifth group and a third group impurity respectively. |
In a given circuit as shown the two input waveforms \(A\) and \(B\) are applied simultaneously. The resultant waveform \(Y\) is:
1. | ![]() |
2. | ![]() |
3. | ![]() |
4. | ![]() |
In the circuit given below, if \(V(t)\) is the sinusoidal voltage source, then the voltage drop \(V_{AB}(t)\) across the resistance \(R\):
1. | is half-wave rectified. |
2. | is full-wave rectified. |
3. | has the same peak value in the positive and negative half-cycles. |
4. | has different peak values during the positive and negative half-cycles. |
A \(2\) V battery is connected across the points \(A\) and \(B\) as shown in the figure given below. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its positive terminal is connected to \(A\) is:
1. | \(0.2\) A | 2. | \(0.4\) A |
3. | zero | 4. | \(0.1\) A |
The logic behind the 'NOR' gate is that it gives:
1. | High output when both the inputs are low. |
2. | Low output when both the inputs are low. |
3. | High output when both the inputs are high. |
4. | None of these |
Zener breakdown will occur if:
1. impurity level is low.
2. impurity level is high.
3. impurity is less on the \(\mathrm{n\text-}\)side.
4. impurity is less on the \(\mathrm{p\text-}\)side.
For a diode connected in parallel with a resistor, Choose the correct graph between \((I)\) and \((V)\) for the given circuit:
1. | |
2. | |
3. | |
4. | |
An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)