1. | antimony | 2. | phosphorous |
3. | arsenic | 4. | boron |
The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
1. | current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type. |
2. | no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type. |
3. | current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type. |
4. | current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type. |
An intrinsic semiconductor is converted into an \(\mathrm{n\text{-}}\)type extrinsic semiconductor by doping it with:
1. phosphorous
2. aluminium
3. silver
4. germanium
For a \(\mathrm{p}\text{-}\)type semiconductor, which of the following statements is true?
1. | Electrons are the majority carriers and pentavalent atoms are the dopants. |
2. | Electrons are the majority carriers and trivalent atoms are the dopants. |
3. | Holes are the majority carriers and trivalent atoms are the dopants. |
4. | Holes are the majority carriers and pentavalent atoms are the dopants. |