The forward-biased diode is:

1.
2.
3.
4.

A pure semiconductor has equal electron and hole concentration of${\mathrm{}}^{\mathrm{}}$ \(10^{16}~\text{m}^{-3}\). Doping by indium increases \(n_h\) to \(4.5\times10^{22}~\text{m}^{-3}\)${\mathrm{}}^{}$.
What is \(n_e \) in the doped semiconductor?
1. \(10^{6}~\text{m}^{-3}\)
2. \(10^{22}~\text{m}^{-3}\)
3. \(\dfrac{10^{32}}{4.5\times10^{22}}~\text{m}^{-3}\)
4. \(4.5\times10^{22}~\text{m}^{-3}\)

Five diodes and three resistors are connected along with a cell of emf \(1.5~\text{V}\) and internal resistance \(0.1~\Omega\) as shown. The current drawn from the cell is: ( diodes are ideal)

          
1. \(3~\text{A}\)
2. \(0.3~\text{A}\)
3. \(5~\text{A}\)
4. \(0.5~\text{A}\)

The increase in the width of the depletion region in a \(\mathrm{p\text{-}n}\) junction diode is due to:
1. reverse bias only
2. both forward bias and reverse bias
3. increase in forwarding current
4. forward bias only

In an \(\mathrm{n\text{-}}\)type silicon, which of the following statement is true:

In an \(\mathrm{p}\text-\)type silicon, which of the following statement is true:

Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by the energy bandgap respectively equal to \((E_g)_C, (E_g)_{Si}~\text{and}~(E_g)_{Ge}\). Which of the following statements is true?

In an unbiased \(\mathrm{p\text-n}\) junction, holes diffuse from the \(\mathrm{p\text-}\)region to \(\mathrm{n\text-}\)region because:

In a half-wave rectification, what is the output frequency if the input frequency is \(50\) Hz?
1. \(50~\text{Hz}\)
2. \(100~\text{Hz}\)
3. \(25~\text{Hz}\)
4. \(60~\text{Hz}\)