Q. No.When an electric field is applied across a semiconductor:
| (a) | electrons move from lower energy level to higher energy level in the conduction band. |
| (b) | electrons move from higher energy level to lower energy level in the conduction band. |
| (c) | holes in the valence band move from higher energy level to lower energy level. |
| (d) | holes in the valence band move from lower energy level to higher energy level. |
Choose the correct option:
1. (a), (c)
2. (a), (d)
3. (b), (d)
4. (c), (d)
Subtopic: Â PN junction |
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In the depletion region of a diode:
| (a) | there are no mobile charges |
| (b) | equal number of holes and electrons exist, making the region neutral |
| (c) | recombination of holes and electrons has taken place |
| (d) | immobile charged ions exist |
1. (a), (b)
2. (a), (b), (d)
3. (c), (d)
4. All options are correct
Subtopic: Â PN junction |
 68%
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Subtopic: Â PN junction |
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NEET - 2024
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Given below are two statements:
| Assertion (A): | The value of current through \(\mathrm{p\text-n}\) junction in the given figure will be \(10~\text{mA}\). |
| Reason (R): | In the above figure, \(\mathrm{p\text-}\)side is at higher potential than \(\mathrm{n\text-}\)side. |
| 1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
| 2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
| 3. | (A) is True but (R) is False. |
| 4. | Both (A) and (R) are False. |
Subtopic: Â PN junction |
From NCERT
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The resistance between \(A\) and \(B\) is
| 1. | \(100~\Omega\) if \(V_A>V_B\) and \(200~\Omega\) if \(V_A<V_B\) |
| 2. | \(100~\Omega\) if \(V_A<V_B\) and \(200~\Omega\) if \(V_A>V_B\) |
| 3. | \(100~\Omega\) |
| 4. | \(200~\Omega\) |
Subtopic: Â PN junction |
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In the given circuits (a), (b) and (c), the potential drop across the two \({\mathrm{p\text-n}}\) junctions are equal in:
| 1. | both circuits (a) and (c) |
| 2. | circuit (a) only |
| 3. | circuit (b) only |
| 4. | circuit (c) only |
Subtopic: Â PN junction |
 65%
From NCERT
NEET - 2022
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In the circuit shown in the figure given below, if the diode forward voltage drop is \(0.3~\text V,\) the voltage difference between \(A\) and \(B\) is:
| 1. | \(1.3~\text V\) | 2. | \(2.3~\text V\) |
| 3. | \(0\) | 4. | \(0.5~\text V\) |
Subtopic: Â PN junction |
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When a forward bias is applied to a \(\mathrm{p\text-n}\) junction, it:
| 1. | raises the potential barrier. |
| 2. | reduces the majority carrier current to zero. |
| 3. | lowers the potential barrier. |
| 4. | None of the above. |
Subtopic: Â PN junction |
 80%
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In a forward-biased \(\mathrm{p\text-n}\) junction diode, the potential barrier in the depletion region is of the form of:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: Â PN junction |
 54%
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