(a) | electrons move from lower energy level to higher energy level in the conduction band. |
(b) | electrons move from higher energy level to lower energy level in the conduction band. |
(c) | holes in the valence band move from higher energy level to lower energy level. |
(d) | holes in the valence band move from lower energy level to higher energy level. |
Choose the correct option:
1. (a), (c)
2. (a), (d)
3. (b), (d)
4. (c), (d)
In the depletion region of a diode:
(a) | there are no mobile charges |
(b) | equal number of holes and electrons exist, making the region neutral |
(c) | recombination of holes and electrons has taken place |
(d) | immobile charged ions exist |
1. (a), (b)
2. (a), (b), (d)
3. (c), (d)
4. All options are correct
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Assertion (A): | The value of current through \(\mathrm{p\text-n}\) junction in the given figure will be \(10~\text{mA}.\) |
Reason (R): | In the above figure, \(\mathrm{p\text-}\)side is at a higher potential than \(\mathrm{n\text-}\)side. |
1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
3. | (A) is True but (R) is False. |
4. | Both (A) and (R) are False. |
1. | \(100~\Omega\) if \(V_A>V_B\) and \(200~\Omega\) if \(V_A<V_B\) |
2. | \(100~\Omega\) if \(V_A<V_B\) and \(200~\Omega\) if \(V_A>V_B\) |
3. | \(100~\Omega\) |
4. | \(200~\Omega\) |
1. | both circuits \((a)\) and \((c)\) |
2. | circuit \((a)\) only |
3. | circuit \((b)\) only |
4. | circuit \((c)\) only |
In the circuit shown in the figure given below, if the diode forward voltage drop is \(0.3~\text V,\) the voltage difference between \(A\) and \(B\) is:
1. | \(1.3~\text V\) | 2. | \(2.3~\text V\) |
3. | \(0\) | 4. | \(0.5~\text V\) |
1. | raises the potential barrier. |
2. | reduces the majority carrier current to zero. |
3. | lowers the potential barrier. |
4. | None of the above. |
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