Q. No.In the circuit shown in the figure, \(V_A>V_B.\) Which of the diodes conduct?
| 1. | only \(D_3\) |
| 2. | \(D_1\) and \(D_3\) |
| 3. | all of the diodes |
| 4. | none of the diodes |
Subtopic: Â PN junction |
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The current-voltage characteristic of an ideal \(\mathrm{p \text{-}n}\) junction diode is given by the graph as shown in the following figure:
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
| 1. | \(V_{A B}=i\cdot5+0.6\) |
| 2. | \(V_{A B}=i\cdot5-0.6\) |
| 3. | \(V_{A B}=i\cdot5+(0.6-5)\) |
| 4. | \(V_{A B}=i\cdot5+\left(0.6+5\right)\) |
Subtopic: Â PN junction |
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In the given circuits (a), (b) and (c), the potential drop across the two \({\mathrm{p\text-n}}\) junctions are equal in:
| 1. | both circuits (a) and (c) |
| 2. | circuit (a) only |
| 3. | circuit (b) only |
| 4. | circuit (c) only |
Subtopic: Â PN junction |
 65%
From NCERT
NEET - 2022
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The resistance between \(A\) and \(B\) is
| 1. | \(100~\Omega\) if \(V_A>V_B\) and \(200~\Omega\) if \(V_A<V_B\) |
| 2. | \(100~\Omega\) if \(V_A<V_B\) and \(200~\Omega\) if \(V_A>V_B\) |
| 3. | \(100~\Omega\) |
| 4. | \(200~\Omega\) |
Subtopic: Â PN junction |
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The circuit shown in figure is given an input signal \(V_i,\) which varies with time and the corresponding output is \(V_o.\) Then,
| 1. | \(V_o=V_i+E\) |
| 2. | \(V_o=V_i-E\) |
| 3. | \(V_o=V_i,\) only when \(V_i>E\) |
| 4. | \(V_o=V_i,\) only when \(V_i<E\) |
Subtopic: Â PN junction |
From NCERT
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A \(\mathrm{p\text-n}\) junction has an electric field of \(6\times 10^{5}\) V/m in the junction and the junction width is \(500\) nm. The height of the potential barrier is:
1. \(0.6\) V
2. \(0.3\) V
3. \(0.5\) V
4. \(0.25\) V
1. \(0.6\) V
2. \(0.3\) V
3. \(0.5\) V
4. \(0.25\) V
Subtopic: Â PN junction |
 91%
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Assume that the threshold voltage of a diode is \(0.7\) V, and the forward resistance is negligible.
The current through the circuit is:
1. \(40\) mA
2. \(54\) mA
3. \(33\) mA
4. \(26\) mA
The current through the circuit is:
1. \(40\) mA
2. \(54\) mA
3. \(33\) mA
4. \(26\) mA
Subtopic: Â PN junction |
 53%
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In an unbiased \(\mathrm{p\text{-}n}\) junction, holes diffuse from the \(\mathrm{p\text{-}}\)regions to \(\mathrm{n\text{-}}\)regions because of:
| 1. | the attraction of free electrons of the \(\mathrm{n\text{-}}\)region. |
| 2. | the higher hole concentration in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. |
| 3. | the higher concentration of electrons is in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. |
| 4. | the potential difference across the \(\mathrm{p\text{-}n}\) junction. |
Subtopic: Â PN junction |
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NEET - 2013
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The \((V\text-I)\) characteristic of a silicon diode is shown in the figure. The resistance of the diode at \(V_D=-10\) V is:
1. \(1\times10^7~\Omega~\)
2. \(2\times10^7~\Omega~\)
3. \(3\times10^7~\Omega~\)
4. \(4\times10^7~\Omega~\)
Subtopic: Â PN junction |
 80%
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Why can't we take one slab of p-type semiconductor and physically join it to another slab of n-type semiconductor to get a p-n junction?
| 1. | the diffusion of majority charge carriers will not occur. |
| 2. | the junction will behave as a discontinuity for the flowing charge carriers. |
| 3. | the junction will behave as a continuity for the flowing charge carriers. |
| 4. | both (1) and (2). |
Subtopic: Â PN junction |
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