Following diagram performs the logic function of:
    
1. AND gate
2. NAND gate
3. OR gate
4. XOR gate

Subtopic:  Logic gates |
 77%
From NCERT
AIPMT - 2003
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The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density

Subtopic:  PN junction |
 73%
From NCERT
AIPMT - 2003
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If a full-wave rectifier circuit is operating from \(50~\text{Hz}\) mains, the fundamental frequency in the ripple will be:
1. \(25~\text{Hz}\)
2. \(50~\text{Hz}\)
3. \(70.7~\text{Hz}\)
4. \(100~\text{Hz}\)

Subtopic:  Rectifier |
 67%
From NCERT
AIPMT - 2003
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Reverse-bias applied to a junction diode:

1. lowers the potential barrier
2. raises the potential barrier
3. increases the majority carrier current
4. increases the minority carrier's current

Subtopic:  PN junction |
 74%
From NCERT
AIPMT - 2003
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The current \((I)\) in the circuit will be:

1. \(\dfrac{5}{40}~\text{A}\) 2. \(\dfrac{5}{50}~\text{A}\)
3. \(\dfrac{5}{10}~\text{A} \) 4. \(\dfrac{5}{20}~\text{A}\)
Subtopic:  PN junction |
 88%
From NCERT
AIPMT - 2001
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The following truth table represent which logic gate:

A B C
1 1 0
0 1 1
1 0 1
0 0 1


1.  XOR
2.  NOT
3.  NAND
4.  AND

Subtopic:  Logic gates |
 91%
From NCERT
AIPMT - 2001
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For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?

        

1. In F.B. the voltage across \(R\) is \(V\).
2. In R.B. the voltage across \(R\) is \(V\).
3. In F.B. the voltage across \(R\) is \(2V\).
4. In R.B. the voltage across \(R\) is \(2V\).

Subtopic:  PN junction |
 79%
From NCERT
AIPMT - 2002
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The given truth table is for which logic gate: 
A B Y
\(1\) \(1\) \(0\)
\(0\) \(1\) \(1\)
\(1\) \(0\) \(1\)
\(0\) \(0\) \(1\)
1. NAND
2. XOR
3. NOR
4. OR

Subtopic:  Logic gates |
 86%
From NCERT
AIPMT - 2002
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What is the correct statement regarding a \(\mathrm{p\text-n}\) junction:
1. High potential at the \(\mathrm{n}\) side and low potential at the \(\mathrm{p}\) side.
2. High potential at the \(\mathrm{p}\) side and low potential at the \(\mathrm{n}\) side.
3. \(\mathrm{p}\) and \(\mathrm{n}\) both are at the same potential.
4. Undetermined.
Subtopic:  PN junction |
From NCERT
AIPMT - 2002
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The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

1. current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type.
2. no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type.
3. current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type.
4. current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type.
Subtopic:  Types of Semiconductors |
 51%
From NCERT
NEET - 2021
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