If the input to the NOT gate is \(A\), its output is:
1. \(0\)
2. \(1\)
3. \(A\)
4. \(\overline{A}\)
Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by the energy bandgap respectively equal to \((E_g)_C, (E_g)_{Si}~\text{and}~(E_g)_{Ge}\). Which of the following statements is true?
1. | \((E_g)_{Si} < (E_g)_{Ge}<(E_g)_{C}\) |
2. | \((E_g)_{C} < (E_g)_{Ge}>(E_g)_{Si}\) |
3. | \((E_g)_{C} > (E_g)_{Si}>(E_g)_{Ge}\) |
4. | \((E_g)_{C} =(E_g)_{Si}=(E_g)_{Ge}\) |
1. | \(0^\circ-90^\circ\) | 2. | \(90^\circ-180^\circ\) |
3. | \(0^\circ-180^\circ\) | 4. | \(0^\circ-360^\circ\) |
1. | an open switch with infinite resistance. |
2. | a closed switch with a voltage drop of \(0\) V. |
3. | a closed switch in series with a battery with voltage of \(0.7\) V. |
4. | a closed switch in series with small resistance and a battery. |
In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
1. | \(\mathrm{p}\text-\)type semiconductor |
2. | insulator |
3. | metal |
4. | \(\mathrm{n}\text-\)type semiconductor |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
1. | \(2.5\) A | 2. | \(10.0\) A |
3. | \(1.43\) A | 4. | \(3.13\) A |
The combination of gates shown below is equivalent to:
1. AND gate
2. XOR gate
3. NOR gate
4. NAND gate
1. | (i) < (ii) < (iii) | 2. | (iii) < (ii) < (i) |
3. | (ii) = (iii) < (i) | 4. | (i) = (iii) < (ii) |
1. | the drift of holes. |
2. | diffusion of charge carriers. |
3. | migration of impurity ions. |
4. | drift of electrons. |
The output in the circuit shown in the figure taken across a capacitor is:
1. | 2. | ||
3. | 4. |