List-I | List-II | ||
(a) | intrinsic semiconductor | (e) | prepared by adding phosphorus |
(b) | \(\mathrm{n}\text-\)type semiconductor | (f) | the width is nearly one micron |
(c) | \(\mathrm{p}\text-\)type semiconductor | (g) | silicon |
(d) | depletion layer | (h) | prepared by adding indium |
1. | a-g, b-e, c-h, d-f |
2. | a-h, b-f, c-e, d-g |
3. | a-e, b-g, c-f, d-h |
4. | a-f, b-h, c-g, d-e |
a. | temperature |
b. | type of semiconductor material |
c. | doping concentration |
d. | biasing of junction |
1. | (a), (b), (c) |
2. | (b), (c), (d) |
3. | (a), (c), (d) |
4. | (a), (b), (c), (d) |
1. | \(10^{10}~\text{m}^{-3}\) | 2. | \(10^{14}~\text{m}^{-3}\) |
3. | \(10^{19}~\text{m}^{-3}\) | 4. | \(10^{18}~\text{m}^{-3}\) |
Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
1. | Statement I is incorrect and Statement II is correct. |
2. | Both Statement I and Statement II are correct. |
3. | Both Statement I and Statement II are incorrect. |
4. | Statement I is correct and Statement II is incorrect. |
1. | drift of holes |
2. | drift of electrons |
3. | diffusion of holes and electrons |
4. | diffusion of neither holes nor electrons |