Q. No.What is the equivalent resistance across the terminals of the battery if the diodes are ideal?
1.
\(10~ \Omega\)
2.
\(20~ \Omega\)
3.
\(15~ \Omega\)
4.
\({10\over3} ~ \Omega\)
The \((I\text-V)\) characteristics of a \(\mathrm{p\text-n}\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(\mathrm{p\text-n}\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
(If diodes are ideal)
| 1. | \(0,0\) | 2. | \(5~\text{mA},5~\text{mA}\) |
| 3. | \(5~\text{mA},0\) | 4. | \(0,5~\text{mA}\) |
| 1. | the drift of holes. |
| 2. | diffusion of charge carriers. |
| 3. | migration of impurity ions. |
| 4. | drift of electrons. |
ii. \(-5~\text{V}, -10~\text{V}\)
iii. \(-4~\text{V}, -12~\text{V}\)
| 1. | (i) < (ii) < (iii) | 2. | (iii) < (ii) < (i) |
| 3. | (ii) = (iii) < (i) | 4. | (i) = (iii) < (ii) |
If in a reverse-biased \(\mathrm{p\text-n}\) junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to \(620\) nm, then the bandgap is:
1. \(1\) eV
2. \(2\) eV
3. \(20\) eV
4. \(0.2\) eV
1. \(2\) A and zero
2. \(3\) A and \(2\) A
3. \(2\) A and \(3\) A
4. zero and \(2\) A
| 1. | Forward biasing | 2. | Reverse biasing |
| 3. | No biasing | 4. | All of these |
The net charges on -type semiconductor and -type semiconductor are, respectively:
| 1. | Positive, negative | 2. | Negative, positive |
| 3. | Positive, positive | 4. | Zero, zero |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
| 1. | \(2.5\) A | 2. | \(10.0\) A |
| 3. | \(1.43\) A | 4. | \(3.13\) A |
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