In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero
1. | \(10^{17} / \text{m}^3 \) | 2. | \(10^{15} / \text{m}^3 \) |
3. | \(10^4 / \text{m}^3 \) | 4. | \(10^2 / \text{m}^3\) |
In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)
1. \(1.5~\Omega\)
2. \(5~\Omega\)
3. \(6.67~\Omega\)
4. \(200~\Omega\)
How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature?
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)
1. | In the circuit (1) and (2) |
2. | In the circuit (2) and (3) |
3. | In the circuit (1) and (3) |
4. | Only in the circuit (1) |
1. | the current in the reverse biased condition is generally very small. |
2. | the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage. |
3. | the reverse-biased current is strongly dependent on the applied bias voltage. |
4. | the forward-biased current is very small in comparison to reverse-biased current. |
1. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\) |
2. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\) |
3. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\) |
4. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\) |
If in a \(\mathrm{p\text-n}\) junction, a square input signal of \(10\) V is applied as shown, then the output across \(R_L\) will be:
1. | 2. | ||
3. | 4. |
In the given figure, the potential difference between \(A\) and \(B\) is:
1. | \(0\) | 2. | \(5\) volt |
3. | \(10\) volt | 4. | \(15\) volt |