Q. No.In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)
If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown,
then the output across \(R_L\) will be:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Which logic gate is represented by the following combination of logic gates?
2. \(\mathrm{NAND}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NOR}\)
The given graph represents the \(\mathrm{V\text{-} I}\) characteristic for a semiconductor device.
Which of the following statement is correct?
| 1. | It is a \(\mathrm{V\text{-} I}\) characteristic for the solar cell where point \(\mathrm{A}\) represents open-circuit voltage and point \(\mathrm{B}\) short circuit current. |
| 2. | It is for a solar cell and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current, respectively. |
| 3. | It is for a photodiode and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current respectively. |
| 4. | It is for a LED and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open circuit voltage and short circuit current, respectively. |
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
| (a) | type of semiconductor material |
| (b) | amount of doping |
| (c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
| 1. | Electrons are minority carriers and pentavalent atoms are dopants. |
| 2. | Holes are minority carriers and pentavalent atoms are dopants. |
| 3. | Holes are the majority carriers and trivalent atoms are dopants. |
| 4. | Electrons are the majority carriers and trivalent atoms are dopants. |
The output \((X)\) of the logic circuit shown in the figure will be:
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. \(X=\overline{\overline{A}} \cdot \overline{\overline{B}}\)
1. \(\mathrm{AND}\) gate
2. \(\mathrm{NOR}\) gate
3. \(\mathrm{OR}\) gate
4. \(\mathrm{NOT}\) gate
| 1. | the attraction of free electrons of the \(\mathrm{n\text{-}}\)region. |
| 2. | the higher hole concentration in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. |
| 3. | the higher concentration of electrons is in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. |
| 4. | the potential difference across the \(\mathrm{p\text{-}n}\) junction. |
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
1. \(0.75~\text{A}\)
2. zero
3. \(0.25~\text{A}\)
4. \(0.5~\text{A}\)
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