When a forward bias is applied to a P–N junction, then what happens to the potential barrier V_B, and the width of depletion region x?

1. V_B increases, x decreases

2. V_B decreases, x increases

3. V_B increases, x increases

4. V_B decreases, x decreases

Find out the value of Y:-

1. A

2. B

3. 0

4. 1

For the transistor circuit shown below, if $\mathrm{\beta }$ = 100, voltage drop between emitter and base is 0.7V then value of V_CE will be :

1. 10 V

2. 5 V

3. 13 V

4. 0

Boolean output for $\mathrm{ABC}(\overline{\mathrm{A}}+\overline{\mathrm{B}}+\overline{\mathrm{C}})$ is:-

1. Zero

2. 1

3. A + B + C

4. ABC

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V₀ changes by:

1. 0.2 V

2. 0.4 V

3. 0.6 V

4. 0.8 V

Given circuit work as a full wave rectifier then input and output terminals will be respectively:-

1. A, D and B, C

2. B, C and A, D

3. A, B and C, D

4. A, C and B, C

In the circuit shown in the figure, when the input voltage of base resistance is 10V, V_BE is zero and V_CE is also zero then what is the value of $\mathrm{\beta }$?

1. 133

2. 1330

3. 13.3

4. 1.33

The logic circuit shown has the input waveforms 'A' and 'B' as shown. Pick out the CORRECT output waveform :-

1. 

2. 

3. 

4. 

The circuit shown here is logically equivalent to:

1. OR gate

2. AND gate

3. NOT gate

4. NAND gate

In an NPN transistor circuit, the collector current is 10 mA. If 90% of the electrons emitted reach the collector, the emitter current($i_E$) and base current ($i_B$ are given by):-

1. $i_E=-1mA, i_B=9mA$

2. $i_E=9mA, i_B=-1mA$

3. $i_E=1mA, i_B=11mA$

4. $i_E=11mA, i_B=1 mA$