The current through an ideal p-n junction diode shown in the circuit will be:
1. 5 A
2. 0.2 A
3. 0.6 A
4. zero
A semiconductor is known to have an electron concentration of \(8\times 10^{13}~\text{cm}^{-3}\) and a hole concentration of \(5\times 10^{2}~\text{cm}^{-3}\). The semiconductor is:
1. | \(\mathrm{n}\text-\)type | 2. | \(\mathrm{p}\text-\)type |
3. | intrinsic | 4. | insulator |
In the given figure, the potential difference between \(A\) and \(B\) is:
1. | \(0\) | 2. | \(5\) volt |
3. | \(10\) volt | 4. | \(15\) volt |
The conductivity of an n-type semiconductor whose density of conduction electrons is , Density of holes is , Mobility of conduction electrons is and Mobility of holes is will be
1.
2.
3.
4.
Which of the following is correct for \(\mathrm{n}\)-type semiconductors?
1. | electron is the majority carriers and trivalent atoms are dopants. |
2. | electrons are majority carriers and pentavalent atoms are dopants. |
3. | holes are majority carriers and pentavalent atoms are dopants. |
4. | holes are majority carriers and trivalent atoms are dopants. |
When a transistor is used as a switch it is in:
1. Active state
2. Cut off state
3. Saturation state
4. Both cut off state and saturation state are possible
1. | the depletion region becomes thick. |
2. | the \(\mathrm{p}\text-\)side is at a higher potential than \(\mathrm{n\text-}\)side. |
3. | the current flowing is zero. |
4. | the effective resistance is of the order of \(10^6 ~\Omega\). |