Which one of the following represents forward biased circuit?

1. 

2. 

3. 

4. 

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_1$ will be

(1) 2.5 A                     

(2) 10.0 A

(3) 1.43 A                   

(4) 3. 13 A

What is the output Y in the following circuit, when all the three inputs A,B,C are first 0 and then 1 ?

1. 0,1

2. 0,0 

3. 1,0

4. 1,1

To get output 1 for the following circuit, the correct choice for the input is

(1) $A=1, B=0, C=0$       

(2) $A=1, B=1, C=0$

(3) $A=1, B=0, C=1$       

(4) $A=0, B=1, C=0$

An n-p-n transistor is connected in the common base configuration in a given amplifier. A load resistance of 800Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuits is 192 Ω the voltage gain and the power gain of the amplifier will respectively be

1. 3.69,3.84
2. 4,4
3. 4,3.69
4. 4,3.84

If in a \(\mathrm{p\text-n}\) junction, a square input signal of \(10\) V is applied as shown, then the output across \(R_L\) will be:
              

1.		2.
3.		4.

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be


1. 30mA

2. 40mA

3. 20mA

4. 35mA

The input signal given to a CE amplifier having a voltage gain of 150 is V_i=2cos(15t+π/3). The corresponding output signal will be

(a)300cos(15t+π/3)

(b)75cos(15t+2π/3)

(c)2cos(15t+5π/3)

(d)300cos(15t+4π/3)

The given graph represents the \(V\text-I\) characteristic for a semiconductor device. Which of the following statement is correct?

The barrier potential of a p-n junction depends on

(i)type of semiconductor material

(ii)amount of doping

(iii)temperature

Which one of the following is correct

1. (i) and (ii)only

2. (ii) only

3. (ii) and (iii)only

4. (i),(ii) and (iii)