The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be

(1) 90                           

(2) 10

(3) 1.25                         

(4) 100

Subtopic:  Applications of Transistor (OLD NCERT) |
NEET - 2008
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A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

1. 10×1014 Hz                              2. 5×1014 Hz

3. 1×1014 Hz                                4. 20×1014 Hz

Subtopic:  Energy Band theory | Applications of PN junction |
 80%
From NCERT
NEET - 2008
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The circuit is equivalent to

1. AND gate                              2. NAND gate

3. NOR gate                              4. OR gate 

Subtopic:  Logic gates |
 66%
From NCERT
NEET - 2008
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In the forward bias arrangement of a PN-junction diode

(1) The N-end is connected to the positive terminal of the battery

(2) The P-end is connected to the positive terminal of the battery

(3) The direction of current is from N-end to P-end in the diode

(4) The P-end is connected to the negative terminal of battery

Subtopic:  PN junction |
 94%
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In a \(\mathrm{p\text-n}\) junction diode:
1. the current in the reverse biased condition is generally very small.
2. the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage.
3. the reverse-biased current is strongly dependent on the applied bias voltage.
4. the forward-biased current is very small in comparison to reverse-biased current.
Subtopic:  PN junction |
 67%
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The cut-in voltage for silicon diode is approximately

(1) 0.2 V                       

(2) 0.6 V

(3) 1.1 V                       

(4) 1.4 V

Subtopic:  Types of Semiconductors |
 50%
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The electrical circuit used to get smooth output from a rectifier circuit is called:

1. oscillator.

2. filter.

3. amplifier.

4. logic gates.

Subtopic:  Rectifier |
 61%
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PN-junction diode works as a insulator, if connected

(1) To A.C.                             

(2) In forward bias

(3) In reverse bias                   

(4) None of these

Subtopic:  Applications of PN junction |
 84%
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The reverse biasing in a PN junction diode

1. Decreases the potential barrier

2. Increases the potential barrier

3. Increases the number of minority charge carriers

4. Increases the number of majority charge carriers

Subtopic:  PN junction |
 82%
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The electrical resistance of depletion layer is large because:

1. It has no charge carriers

2. It has a large number of charge carriers

3. It contains electrons as charge carriers

4. It has holes as charge carriers

Subtopic:  Energy Band theory |
 59%
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