The reverse biasing in a PN junction diode

1. Decreases the potential barrier

2. Increases the potential barrier

3. Increases the number of minority charge carriers

4. Increases the number of majority charge carriers

The electrical resistance of depletion layer is large because:

1. It has no charge carriers

2. It has a large number of charge carriers

3. It contains electrons as charge carriers

4. It has holes as charge carriers

In the circuit given below, the value of the current is

(1) 0 amp                         

(2) ${10}^{-2}$ amp

(3) ${10}^2$ amp                       

(4) ${10}^{-3}$amp

The PN junction diode is used as

(1) An amplifier                       

(2) A rectifier

(3) An oscillator                       

(4) A modulator

In the depletion region of an unbiased P-N junction diode there are

(1) Only electrons

(2) Only holes

(3) Both electrons and holes

(4) Only fixed ions

On increasing the reverse bias to a large value in a PN-junction diode, current

1. Increases slowly                 

2. Remains fixed

3. Suddenly increases             

4. Decreases slowly

In the case of forward biasing of PN-junction, which one of the following figures correctly depicts the direction of flow of carriers

A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be

(1) A P-type semiconductor               

(2) An N-type semiconductor

(3) A PN-junction                               

(4) An intrinsic semiconductor

The approximate ratio of resistances in the forward and reverse bias of the P-N junction diode is:

(a) ${10}^2:1$                     (b) ${10}^{-2}:1$
(c) $1:{10}^{-4}$                   (d) $1:{10}^4$