In forward bias, the width of potential barrier in a P-N junction diode 

(1) Increases

(2) Decreases

(3) Remains constant

(4) First increases then decreases

The cause of the potential barrier in a P-N diode is

(1) Depletion of positive charges near the junction

(2) Concentration of positive charges near the junction

(3) Depletion of negative charges near the junction

(4) Concentration of positive and negative charges near the junction

In a PN-junction diode not connected to any circuit

(1) The potential is the same everywhere

(2) The P-type is at higher potential than the N-type side

(3) There is an electric field at the junction directed from the N- type side to the P- type side

(4) There is an electric field at the junction directed from the P-type side to the N-type side

Which of the following statements is not true

(1) The resistance of intrinsic semiconductors decrease with increase of temperature

(2) Doping pure with trivalent impurities give P-type semiconductors

(3) The majority carriers in N-type semiconductors are holes

(4) A PN-junction can act as a semiconductor diode

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are

(1) Drift in forward bias, diffusion in reverse bias

(2) Diffusion in forward bias, drift in reverse bias

(3) Diffusion in both forward and reverse bias

(4) Drift in both forward and reverse bias

Which one is reverse-biased

Which one is in forward bias

The reason of current flow in P-N junction in forward bias is

(1) Drifting of charge carriers

(2) Minority charge carriers

(3) Diffusion of charge carriers

(4) All of these

The resistance of a reverse biased P-N junction diode is about 
(1) 1 ohm                       

(2) ${10}^2$ohm

(3) ${10}^3$ ohm                     

(4) ${10}^6$ ohm

Avalanche breakdown is due to 

(1) Collision of minority charge carrier

(2) Increase in depletion layer thickness

(3) Decrease in depletion layer thickness

(4) None of these