A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is $5.0\times {10}^{-7}$m wide, the intensity of the electric field in this region is 
1. $1.0\times {10}^6 \mathrm{V}/\mathrm{m}$                     

2. $1.0\times {10}^5 \mathrm{V}/\mathrm{m}$

3. $2.0\times {10}^5 \mathrm{V}/\mathrm{m}$                     

4. $2.0\times {10}^6 \mathrm{V}/\mathrm{m}$

If no external voltage is applied across P-N junction, there would be 

(1) No electric field across the junction

(2) An electric field pointing from N-type to P-type side across the junction

(3) An electric field pointing from P-type to N-type side across the junction

(4) A temporary electric field during formation of P-N junction that would subsequently disappear

Barrier potential of a P-N junction diode does not depend on 

(1) Temperature               

(2) Forward bias

(3) Doping density             

(4) Diode design (shape and size)

Which is the correct diagram of a half-wave rectifier?

1. 

2. 

3. 

4. 

The diode shown in the circuit is a silicon diode. The potential difference between the points A and B will be

(1) 6 V

(2) 0.6 V

(3) 0.7 V

(4) 0 V

Zener breakdown takes place if 

(1) Doped impurity is low             

(2) Doped impurity is high

(3) Less impurity in N-part           

(4) Less impurity in P-type

The correct symbol for zener diode is:

1.		2.
3.		4.

Which one of the following statements is not correct

(1) A diode does not obey Ohm's law

(2) A PN junction diode symbol shows an arrow identifying the direction of current (forward) flow

(3) An ideal diode is an open switch

(4) An ideal diode is an ideal one way conductor

A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

(1) X is P-type, Y is N-type and the junction is forward biased

(2) X is N-type, Y is P-type and the junction is forward biased

(3) X is P-type, Y is N-type and the junction is reverse biased

(4) X is N-type, Y is P-type and the junction is reverse biased

Which is the wrong statement in following sentences?

A device in which P and N-type semiconductors are used is more useful then a vacuum type because 

(1) Power is not necessary to heat the filament

(2) It is more stable

(3) Very less heat is produced in it

(4) Its efficiency is high due to a high voltage across the junction