The electron mobility in N-type germanium is 3900 cm2/v-s and its conductivity is 6.24 mho/cm, then impurity concentration will be if the effect of cotters is negligible
(a) 1015 /cm3                  (b) 1013/cm3
(c) 1012/cm3                   (d) 1016/cm3

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Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor

 

1. 

2. 

3. 

4. 

Subtopic:  Energy Band theory |
 54%
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The energy band diagrams for three semiconductor samples of silicon are as shown. We can then assert that

(1) Sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively

(2) Sample X is undoped while both samples Y and Z have been doped with a fifth group impurity

(3) Sample X has been doped with equal amounts of third and fifth group impurities while samples Y and Z are undoped

(4) Sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively

Subtopic:  Energy Band theory |
 75%
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In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)

Subtopic:  Types of Semiconductors |
 68%
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The temperature (T) dependence of resistivity (ρ) of a semiconductor is represented by

1. 

2. 

3. 

4. 

Subtopic:  Energy Band theory |
 73%
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In a forward biased P-N junction diode, the potential barrier in the depletion region is of the form

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
 56%
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Different voltages are applied across a P-N junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
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If the following input signal is sent through a PN-junction diode, then the output signal across RL will be

 

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
 82%
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The curve between charge density and distance near P-N junction will be

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
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The resistance of a germanium junction diode whose is shown in figure is Vk=0.3V


(1) 5 kΩ

(2) 0.2 kΩ

(3) 2.3 kΩ

(4) 102.3

Subtopic:  PN junction |
 71%
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