The following configuration of gate is equivalent to

1. NAND
2. XOR
3. OR
4. None of these

Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1) at R, we must have

(1) X = 0, Y = 1

(2) X = 1, Y = 1

(3) X = 1, Y = 0

(4) X = 0, Y = 0

The combination of gates shown below produces

(1) AND gate

(2) XOR gate

(3) NOR gate

(4) NAND gate

The figure shows two NAND gates followed by a NOR gate. Which of the following logic gate does the figure represent?

1. OR
2. AND
3. NAND
4. None of these

The diagram of a logic circuit is given below. The output \(F\) of the circuit is represented by:
       

1. \(W(X+Y)\)
2. \(W\cdot (X\cdot Y)\)
3. \(W+ (X\cdot Y)\)
4. \(W+(X+Y)\)

For the transistor circuit shown below, if $\mathrm{\beta }$ = 100, the voltage drop between emitter and base is 0.7 V, then the value of ${\mathrm{V}}_{\mathrm{CE}}$ will be:
                  
1. 10 V
2. 5 V
3. 13 V
4. 0 V

In the following circuit, find ${\mathrm{I}}_1$ and ${\mathrm{I}}_2$.

(a) 0, 0
(b) 5 mA, 5 mA
(c) 5 mA, 0
(d) 0, 5 mA

In the circuit shown in the figure, the maximum output voltage ${\mathrm{V}}_0$ is :

1. 0 V                        2. 5 V
3. 10 V                      4. $\frac{5}{\sqrt{2}}$ 

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the valve of ${\mathrm{V}}_0$ changes by 

(1) 0.2 V                   

(2) 0.4 V

(3) 0.6 V                   

(4) 0.8 V

The contribution in the total current flowing through a semiconductor due to electrons and holes are $\frac{3}{4}$ and $\frac{1}{4}$ respectively. If the drift velocity of electrons is $\frac{5}{2}$ times that of holes at this temperature, then the ratio of concentration of electrons and holes is
1. 6 : 5                 

2. 5 : 6

3. 3 : 2                 

4. 2 : 3