Which one of the following represents forward biased circuit?
1.
2.
3.
4.
To get output 1 for the following circuit, the correct choice for the input is
(1)
(2)
(3)
(4)
An n-p-n transistor is connected in the common base configuration in a given amplifier. A load resistance of 800Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuits is 192 Ω the voltage gain and the power gain of the amplifier will respectively be
1. 3.69,3.84
2. 4,4
3. 4,3.69
4. 4,3.84
If in a \(\mathrm{p\text-n}\) junction, a square input signal of \(10\) V is applied as shown, then the output across \(R_L\) will be:
1. | 2. | ||
3. | 4. |
The given graph represents the \(V\text-I\) characteristic for a semiconductor device. Which of the following statement is correct?
1. | It is a \(V\text-I\) characteristic for a solar cell where point \(A\) represents open-circuit voltage and point \(B\) represents short-circuit current. |
2. | It is for a solar cell and points \(A\) and \(B\) represent open-circuit voltage and current respectively. |
3. | It is for a photodiode and points \(A\) and \(B\) represent open-circuit voltage and current respectively. |
4. | It is for a LED and points \(A\) and \(B\) represent open-circuit voltage and short circuit current respectively. |
The output (x) of logic circuit shown in figure will be
(1)
(2)
(3)
(4)
The input resistance of a silicon transistor is
100 . Base current is changed by 40
which results in a change in collector current
by 2 mA. This transistor is used as a common-
emitter amplifier with a load resistance of 4 k.
The voltage gain of the amplifier is
1. 2000
2. 3000
3. 4000
4. 1000
Symbolic representation of four logic gates
are shown as
(i)
(ii)
(iii)
(iv)
Pick out which ones are for AND, NAND and
NOT gates, respectively.
1. (iii), (ii)and (i)
2. (iii), (ii) and (iv)
3. (ii), (iv) and (iii)
4. (ii), (iii) and (iv)
In the following figure, the diodes which are forward biased, are
1. III and IV only
2. I and III only
3. II only
4. II and IV only
1. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\) |
2. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\) |
3. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\) |
4. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\) |