$\mathrm{In} \mathrm{the} \mathrm{given} \mathrm{circuit} \mathrm{power}$
$\mathrm{developed} \mathrm{in} 1\mathrm{k\Omega } \mathrm{resistor} \mathrm{is}$

     

1.  36 mW

2.  12 mW

3.  144 mW

4.  64 mW

 

In a common emitter transistor amplifier, the audio signal vlotage across the collector is 3V. The resistance of collector is 3k$\Omega$. If current gain is 100 and the base resistance is 2k$\Omega$, the voltage and power gain of the amplifier is 

(1) 200 and 1000

(2) 15 and 200

(3) 150 and 15000

(4) 20 and 2000

What is the output Y in the following circuit, when all the three inputs A,B,C are first 0 and then 1 ?

1. 0,1                   2. 0,0 

3. 1,0                   4. 1,1

To get output 1 for the following circuit, the correct choice for the input is

(1) $A=1, B=0, C=0$       

(2) $A=1, B=1, C=0$

(3) $A=1, B=0, C=1$       

(4) $A=0, B=1, C=0$

Which logic gate is represented by the following combination of logic gates?
         
1. OR
2. NAND
3. AND
4. NOR

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be


1. 30mA

2. 40mA

3. 20mA

4. 35mA

The barrier potential of a p-n junction depends on

(i)type of semiconductor material

(ii)amount of doping

(iii)temperature

Which one of the following is correct

1. (i) and (ii)only

2. (ii) only

3. (ii) and (iii)only

4. (i),(ii) and (iii)

C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because 

1. in case of C, the valence band is not completely filled at absolute zero temperature

2. in case of C,the condition band is partly filled even at absolute zero temperature 

3. the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

4 .the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

Transfer characteristic [output voltage $\left(V_0\right)$ vs input voltage $\left(V_i\right)$] for a base biased transistor in CE configuration is as shown in the figure.For using transistor as a switch, it is used 

(1) in region III

(2) both in region (I) and (III)

(3) in region II

(4) in region I

The input resistance of a silicon transistor is

100 $\mathrm{\Omega }$. Base current is changed by 40 $\mathrm{\mu A}$

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 k$\mathrm{\Omega }$.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000