Q. No.The figure shows a logic circuit with two inputs A and B and the output C. The voltage waveforms across A, B, and C are as given. The logic circuit gate is:
1. OR gate
2. NOR gate
3. AND gate
4. NAND gate
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Pick out which ones are for AND, NAND, and NOT gates, respectively.
1. (i), (iv), and (iii)
2. (ii), (iii), and (iv)
3. (ii), (iv), and (iii)
4. (ii), (iv), and (i)
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1. the antimony becomes an acceptor atom
2. there will be more free electrons than holes in the semiconductor
3. its resistance is increased
4. it becomes a p-type semiconductor
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1. the positive terminal of the battery is connected to p-side and the depletion region becomes thick
2. the negative terminal of the battery is connected to n-side and the depletion region becomes thin
3. the positive terminal of the battery is connected to n-side and the depletion region become thin
4. the negative terminal of the battery is connected to p-side and the depletion region becomes thick
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A transistor is operated in common emitter configuration at Vc =2V such that a change in the base current from 100 to 300 produces a change in the collector current from 10 mA to 20mA. The current gain is:
1. 75
2. 100
3. 25
4. 50
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Which one of the following statements is false?
1. Pure Si doped with trivalent impurities gives a p-type semiconductor.
2. The majority carriers in an n-type semiconductor are holes.
3. The minority carriers in a p-type semiconductor are electrons.
4. The resistance of intrinsic semiconductor decreases with an increase in temperature.of
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The device that can act as a complete electronic circuit is:
1. Junction diode
2. Integrated circuit
3. Junction transistor
4. Zener diode
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A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is:
1. 500
2. 1000
3. 1250
4. 50
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2. 4000 nm
3. 6000 nm
4. 4000 Å
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A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:
1.
2.
3.
4.
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