To get an output Y = 1 from the circuit shown below, the input must be:
1. A=0 B=1 C=0
2. A=0 B=0 C=1
3. A=1 B=0 C=1
4. A=1 B=0 C=0
A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:
1.
2.
3.
4.
The circuit is equivalent to:
1. AND gate
2. NAND gate
3. NOR gate
4. OR gate
In the following circuit, the output \(Y\) for all possible inputs \(A\) and \(B\) is expressed by the truth table:
1. | A | B | Y | 2. | A | B | Y |
0 | 0 | 0 | 0 | 0 | 1 | ||
0 | 1 | 0 | 0 | 1 | 1 | ||
1 | 0 | 0 | 1 | 0 | 1 | ||
1 | 1 | 1 | 1 | 1 | 0 | ||
3. | 0 | 0 | 1 | 4. | 0 | 0 | 0 |
0 | 1 | 0 | 0 | 1 | 1 | ||
1 | 0 | 0 | 1 | 0 | 1 | ||
1 | 1 | 1 | 1 | 1 | 1 |
A | B | Y |
0 | 0 | 1 |
0 | 1 | 1 |
1 | 0 | 1 |
1 | 1 | 0 |
1. | the positive terminal of the battery is connected to the p-side and the depletion region becomes thick. |
2. | the negative terminal of the battery is connected to the n-side and the depletion region becomes thin. |
3. | the positive terminal of the battery is connected to the n-side and the depletion region becomes thin. |
4. | the negative terminal of the battery is connected to the p-side and the depletion region becomes thick. |
Transfer characteristics [output voltage () vs input voltage ()] for a base biased transistor in CE configurations are as shown in the figure. For using the transistor as a switch, it is used:
1. In region III
2. Both in the region (I) and (III)
3. In region II
4. In region I
The output \((X)\) of the logic circuit shown in the figure will be:
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. None of the above