A | B | Y |
0 | 0 | 1 |
0 | 1 | 1 |
1 | 0 | 1 |
1 | 1 | 0 |
In the following circuit, the output \(Y\) for all possible inputs \(A\) and \(B\) is expressed by the truth table:
1. | A | B | Y | 2. | A | B | Y |
0 | 0 | 0 | 0 | 0 | 1 | ||
0 | 1 | 0 | 0 | 1 | 1 | ||
1 | 0 | 0 | 1 | 0 | 1 | ||
1 | 1 | 1 | 1 | 1 | 0 | ||
3. | 0 | 0 | 1 | 4. | 0 | 0 | 0 |
0 | 1 | 0 | 0 | 1 | 1 | ||
1 | 0 | 0 | 1 | 0 | 1 | ||
1 | 1 | 1 | 1 | 1 | 1 |
The circuit is equivalent to:
1. AND gate
2. NAND gate
3. NOR gate
4. OR gate
A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:
1.
2.
3.
4.
To get an output Y = 1 from the circuit shown below, the input must be:
1. A=0 B=1 C=0
2. A=0 B=0 C=1
3. A=1 B=0 C=1
4. A=1 B=0 C=0
1. | the positive terminal of the battery is connected to the p-side and the depletion region becomes thick. |
2. | the negative terminal of the battery is connected to the n-side and the depletion region becomes thin. |
3. | the positive terminal of the battery is connected to the n-side and the depletion region becomes thin. |
4. | the negative terminal of the battery is connected to the p-side and the depletion region becomes thick. |
Transfer characteristics [output voltage () vs input voltage ()] for a base biased transistor in CE configurations are as shown in the figure. For using the transistor as a switch, it is used:
1. In region III
2. Both in the region (I) and (III)
3. In region II
4. In region I
The output \((X)\) of the logic circuit shown in the figure will be:
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. None of the above