Q. No.Which logic gate is represented by the following combination of logic gates?
1. \(\mathrm{OR}\)
2. \(\mathrm{NAND}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NOR}\)
2. \(\mathrm{NAND}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NOR}\)
The given graph represents the \(\mathrm{V\text{-} I}\) characteristic for a semiconductor device.
Which of the following statement is correct?
| 1. | It is a \(\mathrm{V\text{-} I}\) characteristic for the solar cell where point \(\mathrm{A}\) represents open-circuit voltage and point \(\mathrm{B}\) short circuit current. |
| 2. | It is for a solar cell and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current, respectively. |
| 3. | It is for a photodiode and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current respectively. |
| 4. | It is for a LED and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open circuit voltage and short circuit current, respectively. |
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
| (a) | type of semiconductor material |
| (b) | amount of doping |
| (c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
| 1. | Electrons are minority carriers and pentavalent atoms are dopants. |
| 2. | Holes are minority carriers and pentavalent atoms are dopants. |
| 3. | Holes are the majority carriers and trivalent atoms are dopants. |
| 4. | Electrons are the majority carriers and trivalent atoms are dopants. |
The output \((X)\) of the logic circuit shown in the figure will be:
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. \(X=\overline{\overline{A}} \cdot \overline{\overline{B}}\)
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
1. \(0.75~\text{A}\)
2. zero
3. \(0.25~\text{A}\)
4. \(0.5~\text{A}\)
In a CE transistor amplifier, the audio signal voltage across the resistance of 2 k is 2V. If the base resistance is 1 k and the current amplification of the transistor is 100, the input signal voltage is:
1. 0.1 V
2. 1.0 V
3. 1 mV
4. 10 mV
| 1. | in the case of \(C\), the valence band is not completely filled at absolute zero temperature. |
| 2. | in the case of \(C\), the conduction band is partly filled even at absolute zero temperature. |
| 3. | the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third. |
| 4. | the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit. |
Transfer characteristics [output voltage () vs input voltage ()] for a base biased transistor in CE configurations are as shown in the figure. For using the transistor as a switch, it is used:
1. In region III
2. Both in the region (I) and (III)
3. In region II
4. In region I
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