Consider the junction diode as an ideal. The value of current flowing through \(AB\) is: 
   
1. \(10^{-2}~\text{A}\)
2. \(10^{-1}~\text{A}\)
3. \(10^{-3}~\text{A}\)
4. \(0~\text{A}\)

Subtopic:  PN junction |
 77%
From NCERT
NEET - 2016
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An n-p-n transistor is connected in the common-emitter configuration in a given amplifier. A load resistance of 800 Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuits is 192 Ω, the voltage gain and the power gain of the amplifier will respectively be:
 
1. 3.69, 3.84
2. 4, 4
3. 4, 3.69
4. 4, 3.84
Subtopic:  Transistor (OLD NCERT) | Applications of Transistor (OLD NCERT) |
 72%
From NCERT
NEET - 2016
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In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
  
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)

Subtopic:  PN junction |
 75%
From NCERT
NEET - 2015
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The input signal given to a CE amplifier having a voltage gain of 150 is Vi=2cos15t+π3. The corresponding output signal will be:

1. 30 cos 15t+π3

2. 75 cos 15t+2π3

3. 2 cos 15t+5π3

4. 300 cos 15t+4π3

Subtopic:  Applications of Transistor (OLD NCERT) |
 74%
From NCERT
NEET - 2015
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If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown, 

 
then the output across \(R_L\) will be:

1. 2.
3. 4.
Subtopic:  PN junction |
 72%
From NCERT
NEET - 2015
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Which logic gate is represented by the following combination of logic gates? 

    
1. \(\mathrm{OR}\)
2. \(\mathrm{NAND}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NOR}\)
Subtopic:  Logic gates |
 67%
From NCERT
NEET - 2015
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The given graph represents the \(\mathrm{V\text{-} I}\) characteristic for a semiconductor device.

   

Which of the following statement is correct?

1. It is a \(\mathrm{V\text{-} I}\) characteristic for the solar cell where point \(\mathrm{A}\) represents open-circuit voltage and point \(\mathrm{B}\) short circuit current.
2. It is for a solar cell and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current, respectively.
3. It is for a photodiode and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current respectively.
4. It is for a LED and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open circuit voltage and short circuit current, respectively.
Subtopic:  Applications of PN junction |
 75%
From NCERT
AIPMT - 2014
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The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on: 

(a) type of semiconductor material 
(b) amount of doping 
(c) temperature 

Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)

Subtopic:  PN junction |
 83%
From NCERT
NEET - 2014
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In an \(\mathrm{n\text-}\)type semiconductor, which of the following statement is true?
1. Electrons are minority carriers and pentavalent atoms are dopants.
2. Holes are minority carriers and pentavalent atoms are dopants.
3. Holes are the majority carriers and trivalent atoms are dopants.
4. Electrons are the majority carriers and trivalent atoms are dopants.

Subtopic:  Types of Semiconductors |
 79%
From NCERT
AIPMT - 2013
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In a common emitter (CE) amplifier having a voltage gain G, the transistor used has trans conductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with transconductance of 0.02 mho and current gain of 20, the voltage gain will be:
1. 1.5G
2. 13G
3. 54G
4. 23G
Subtopic:  Applications of Transistor (OLD NCERT) |
 50%
From NCERT
AIPMT - 2013
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