Q. No.\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:
1.
in the case of \(C\), the valence band is not completely filled at absolute zero temperature.
2.
in the case of \(C\), the conduction band is partly filled even at absolute zero temperature.
3.
the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third.
4.
the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit.
Transfer characteristics [output voltage () vs input voltage ()] for a base biased transistor in CE configurations are as shown in the figure. For using the transistor as a switch, it is used:
1. In region III
2. Both in the region (I) and (III)
3. In region II
4. In region I
The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
1. \(\text{OR}\) gate
2. \(\text{NOR}\) gate
3. \(\text{AND}\) gate
4. \(\text{NAND}\) gate
The symbolic representation of four gates is shown as:
Pick out which ones are for AND, NAND, and NOT gates, respectively.
1. (i), (iv), and (iii)
2. (ii), (iii), and (iv)
3. (ii), (iv), and (iii)
4. (ii), (iv), and (i)
| 1. | the antimony becomes an acceptor atom |
| 2. | there will be more free electrons than holes in the semiconductor |
| 3. | its resistance is increased |
| 4. | it becomes a \(p\small{-}\)type semiconductor |
| 1. | the positive terminal of the battery is connected to the p-side and the depletion region becomes thick. |
| 2. | the negative terminal of the battery is connected to the n-side and the depletion region becomes thin. |
| 3. | the positive terminal of the battery is connected to the n-side and the depletion region becomes thin. |
| 4. | the negative terminal of the battery is connected to the p-side and the depletion region becomes thick. |
A transistor is operated in a common emitter configuration at Vc =2 V such that a change in the base current from 100 to 300 produces a change in the collector current from 10 mA to 20mA. The current gain is:
1. 75
2. 100
3. 25
4. 50
Which one of the following statements is false?
| 1. | Pure Si doped with trivalent impurities gives a p-type semiconductor. |
| 2. | The majority of carriers in an n-type semiconductor are holes. |
| 3. | The minority carriers in a p-type semiconductor are electrons. |
| 4. | The resistance of intrinsic semiconductors decreases with an increase in temperature. |
The device that can act as a complete electronic circuit is:
1. Junction diode
2. Integrated circuit
3. Junction transistor
4. Zener diode
A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is:
1. 500
2. 1000
3. 1250
4. 50
© 2024 GoodEd Technologies Pvt. Ltd.