Q. No.
The output \((X)\) of the logic circuit shown in the figure will be:
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. \(X=\overline{\overline{A}} \cdot \overline{\overline{B}}\)
The output \((X)\) of the logic circuit shown in the figure will be:
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. \(X=\overline{\overline{A}} \cdot \overline{\overline{B}}\)
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
1. \(0.75~\text{A}\)
2. zero
3. \(0.25~\text{A}\)
4. \(0.5~\text{A}\)
In a CE transistor amplifier, the audio signal voltage across the resistance of 2 k is 2V. If the base resistance is 1 k and the current amplification of the transistor is 100, the input signal voltage is:
1. 0.1 V
2. 1.0 V
3. 1 mV
4. 10 mV
| 1. | in the case of \(C\), the valence band is not completely filled at absolute zero temperature. |
| 2. | in the case of \(C\), the conduction band is partly filled even at absolute zero temperature. |
| 3. | the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third. |
| 4. | the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit. |
Transfer characteristics [output voltage () vs input voltage ()] for a base biased transistor in CE configurations are as shown in the figure. For using the transistor as a switch, it is used:
1. In region III
2. Both in the region (I) and (III)
3. In region II
4. In region I
The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
1. \(\text{OR}\) gate
2. \(\text{NOR}\) gate
3. \(\text{AND}\) gate
4. \(\text{NAND}\) gate
The symbolic representation of four gates is shown as:
Pick out which ones are for AND, NAND, and NOT gates, respectively.
1. (i), (iv), and (iii)
2. (ii), (iii), and (iv)
3. (ii), (iv), and (iii)
4. (ii), (iv), and (i)
| 1. | the antimony becomes an acceptor atom |
| 2. | there will be more free electrons than holes in the semiconductor |
| 3. | its resistance is increased |
| 4. | it becomes a \(p\small{-}\)type semiconductor |
| 1. | the positive terminal of the battery is connected to the p-side and the depletion region becomes thick. |
| 2. | the negative terminal of the battery is connected to the n-side and the depletion region becomes thin. |
| 3. | the positive terminal of the battery is connected to the n-side and the depletion region becomes thin. |
| 4. | the negative terminal of the battery is connected to the p-side and the depletion region becomes thick. |
A transistor is operated in a common emitter configuration at Vc =2 V such that a change in the base current from 100 to 300 produces a change in the collector current from 10 mA to 20mA. The current gain is:
1. 75
2. 100
3. 25
4. 50
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